Towards ultra-scaled nanoelectronics using the zipper material system Bi 2O 2Se/Bi 2SeO 5

arXiv:2512.10786 · cond-mat.mtrl-sci, cond-mat.mes-hall · Submitted 2025-12-11 · Read on arXiv

cond-mat.mtrl-sci, cond-mat.mes-hall

Submitted: 2025-12-11

Updated: 2026-09-21

Terminology

• Hysteresis — 155× in this paper · explained in 3 episodes
• Regularization — 6× in this paper · explained in 3 episodes
• DFT Calculations — 5× in this paper · explained in 2 episodes
• Benchmarking — 3× in this paper · explained in 3 episodes
• Accuracy — 2× in this paper · explained in 1 episode
• Consistency — 2× in this paper · explained in 3 episodes
• Ab Initio — 1× in this paper · explained in 1 episode
• Alignment — 1× in this paper · explained in 1 episode
• Benchmark — 1× in this paper · explained in 2 episodes
• Core — 1× in this paper · explained in 2 episodes
• Diffusion Model — 1× in this paper · explained in 8 episodes
• IEEE International Electron Devices Meeting — 1× in this paper
• IRDS High Power — 1× in this paper

Sources

• Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials

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